Electron-beam lithography resist profile simulation for highly sensitive resist

被引：5

作者：

Lee, C

Ham, YM

Kim, SH

Chun, K

机构：

[1] School of Electrical Engineering, Seoul National University, Seoul

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(96)00170-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very highly sensitive resist is difficult to simulate its resist profile because of its extreme difference of development rate which can be determined from absorbed energy when electron beam is exposed. We developed resist profile simulator named ELIS (Electron-beam LIthography Simulator) that can predict the development profile of a very highly sensitive resist: Hybrid scattering model, Gaussian beam convolution and its superposition were used for Monte Carlo simulation and the ray tracing model for resist development.

引用

页码：125 / 128

页数：4