High density nonvolatile magnetoresistive RAM

被引：18

作者：

Tehrani, S

Chen, E

Durlam, M

Zhu, T

Goronkin, H

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Non-volatile memory cells based on ferromagnetically coupled giant magnetoresistive (GMR) material were patterened into submicron feature sizes. Switching characteristics of such cells allow for bipolar signal reading which is twice of the intrinsic magnetoresistance change of the material. Excellent thermal stability is reported for deep submicron memory cells.

引用

页码：193 / 196

页数：4