Heteroepitaxial growth of zinc oxide single crystal thin films on (111)plane YSZ by pulsed laser deposition

被引：32

作者：

Ohta, H ^{[1
]}

Tanji, H ^{[1
]}

Orita, M ^{[1
]}

Hosono, H ^{[1
]}

Kawazoe, H ^{[1
]}

机构：

[1] HOYA Corp, R&D Ctr, Tokyo 1968510, Japan

来源：

EPITAXIAL GROWTH-PRINCIPLES AND APPLICATIONS | 1999年 / 570卷

关键词：

D O I：

10.1557/PROC-570-309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heteroepitaxial ZnO films were grown on (111) surface of yttria stabilized zirconia (YSZ) and (0001) surface of sapphire by PLD method, using KrF eximer laser (248nm) in an ultra-high-vacuum chamber. ZnO grown on YSZ (111) at the substrate temperature of 800 degrees C had an epitaxial relationship at the ZnO/YSZ interface of ZnO [11 (2) over bar 0]//YSZ [1 (1) over bar 0]. Hexagonal-shaped grains were observed whose surfaces were atomically flat. The grain size of ZnO increased and the Hall mobility rose toward 1400nm and 75cm(2)/Vs, respectively as film thickness increased from 10 nln to 800 nm.

引用

页码：309 / 313

页数：5