Electric field effects on excitons in gallium nitride

被引：30

作者：

Binet, F ^{[1
]}

Duboz, JY ^{[1
]}

Rosencher, E ^{[1
]}

Scholz, F ^{[1
]}

Harle, V ^{[1
]}

机构：

[1] UNIV STUTTGART, INST PHYS 4, D-70550 STUTTGART, GERMANY

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.54.8116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electric-field effects on Wannier exciton are observed in GaN thin films. Using both absorption and photocurrent measurements, we have studied the excitonic Franz-Keldysh effect in thin epitaxial GaN films at temperatures between 80 and 300 K. We have measured the Stark shift, quenching, and broadening of the exciton peak with applied field. These results are compared with theoretical calculations from the literature. The physics of exciton ionization at varying temperatures is discussed, which explains the interplay between absorption and photocurrent.

引用

页码：8116 / 8121

页数：6

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