Raman studies in CdS thin films in the evolution from cubic to hexagonal phase

被引:84
作者
ZelayaAngel, O
CastilloAlvarado, FD
AvendanoLopez, J
EscamillaEsquivel, A
ContrerasPuente, G
LozadaMorales, R
TorresDelgado, G
机构
[1] INST POLITECN NACL, UPALM, ESCUELA SUPER FIS & MATERMAT, MEXICO CITY 07730, DF, MEXICO
[2] UNIV AUTONOMA PUEBLA, FCFM BENEMERITA, DEPT OPTOELECT, PUEBLA 72570, MEXICO
[3] CINVESTAV, MAT LAB, QUERETARO, QRO, MEXICO
关键词
semiconductors; thin films; phase transitions; phonons;
D O I
10.1016/S0038-1098(97)00080-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
CdS polycrystalline thin films prepared onto glass substrates by the chemical bath deposition method at 80 degrees C showed cubic crystalline structure (beta-CdS). Upon thermal annealing in Ar + S-2 flux at different temperatures in the range 200-510 degrees C, the crystalline structure evolution of layers from the cubic modification (as-grown sample) to hexagonal phase (annealed at highest temperature samples) has been observed. At around 300 degrees C the critical point of the phase transition has been experimentally determined to occur. Raman spectroscopy measurements were carried out at room temperature for as-grown and annealed layers. The A(1)(LO) + E-1(LO) modes at 305 cm(-1) and replicas appear for as-grown and annealed samples. The E-1(TO) and the A(1)(TO) modes were also observed. A classic simple approach is proposed in order to explain the presence of the TO modes. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:161 / 166
页数:6
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