Photo- and thermo-stimulated luminescence of CsI-Tl crystal after UV light irradiation at 80 K

被引:36
作者
Chernov, SA
Trinkler, L
Popov, AI
机构
[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
[2] Ctr Interdisciplinaire Rech Ions Lourds, Lab CEA, CNRS, F-14040 Caen, France
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS-INCORPORATING PLASMA SCIENCE AND PLASMA TECHNOLOGY | 1998年 / 143卷 / 04期
关键词
photostimulated luminescence; impurity centres; radiation defects; scintillators; alkali halide crystals; CsI-Tl; thermoluminescence; energy storage; self-trapped excitons; Tl impurity;
D O I
10.1080/10420159808214037
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Thermo- and photo-stimulated luminescence are studied for CsI-Tl crystal after the irradiation with the UV light at 80 K. Creation spectrum of the photostimulated luminescence coincides with the D absorption band of Tl+ ions. Nature of the defects created by UV light at low temperatures is discussed basing on the correspondence between the thermostimulated glow curve peaks and thermal evolution of the photostimulation spectra observed after irradiation in the D absorption band. Three bands at 1400, 950 and 580 nm have been observed in the stimulation spectrum at 80 K. The 1400 and 950 nm stimulation bands are presumably explained as the optical transitions in the TIO centre forming the spatially correlated defect pair with Vk centre while the 580 nm stimulation band is connected with the unperturbed TIO centres. It is concluded that the Tl+ luminescence at low temperature is connected with the electron recombination with the Tl2+ centre.
引用
收藏
页码:345 / 355
页数:11
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