The structure characteristics and piezo-resistance effect in hydrogenated nanocrystalline silicon films

被引:11
作者
He, YL [1 ]
Liu, H [1 ]
Yu, MB [1 ]
Yu, XM [1 ]
机构
[1] NORMAL INST RAILWAY,DEPT PHYS,SHUZHOU 215009,PEOPLES R CHINA
来源
NANOSTRUCTURED MATERIALS | 1996年 / 7卷 / 07期
关键词
D O I
10.1016/S0965-9773(96)00052-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we successfully applied the PECVD method to deposit nanocrystalline silicon films (nc - Si: H) and determined the microstructure with HREM and STM technology. The nc - Si: H films consist of a large number of micrograins and interfaces. For this man-made film material with special structure, we studied the piezo- resistance effect and hydrogen content, which varied with the microstructure of the films. We suggest that the unique structure of nc - Si:H films is the main cause of larger piezo- resistance effect and higher hydrogen content in the films.
引用
收藏
页码:769 / 777
页数:9
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