Pulsed laser deposition of perovskite relaxor ferroelectric thin films

被引:22
作者
Scarisoreanu, N.
Dinescu, M.
Craciun, F.
Verardi, P.
Moldovan, A.
Purice, A.
Galassi, C.
机构
[1] NILPRP, Lasers Dept, RO-077125 Bucharest, Romania
[2] CNR, Ist Sistemi Complessi, I-00133 Rome, Italy
[3] CNR, Ist Acust, I-00133 Rome, Italy
[4] CNR, ISTEC, I-48018 Faenza, Italy
关键词
PLZT films; NBT-BT films; perovskite; relaxor ferroelectric films;
D O I
10.1016/j.apsusc.2005.07.140
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Structural, dielectric and ferroelectric properties of thin films of La-doped lead zirconate titanate (PLZT) and sodium bismuth titanate-barium titanate (NBT-BT) perovskite relaxor ferroelectric have been investigated. PLZT films were deposited on Pt/Si substrates in oxygen atmosphere by pulsed laser deposition (PLD) and radio frequency (RF) discharge-assisted PLD, using sintered targets with different La content and Zr/Ti ratio, near or at the boundary relaxor ferroelectric. The films are polycrystalline with perovskite cubic or slightly rhombohedral structure. A slim ferroelectric hysteresis loop, typical for relaxors, has been measured for all film sets. Dielectric characterization shows a large value of capacitance tunability and low dielectric loss. However, common problems related to lead diffusion into the metallic electrode layer do not allow one to obtain high capacitance values, due to the formation of an interface layer with low dielectric constant. Lead-free NBT-BT thin films have been deposited on single crystal (1 0 0)-MgO substrates starting from targets with composition at the morphotropic phase boundary between rhombohedral and tetragonal phase. Films deposited by PLD are polycrystalline perovskite with a slight (1 0 0) orientation. Capacitance measurements were performed using interdigital metallic electrodes deposited on the film's top surface and showed high relative dielectric constant, on the order of 1300. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:4553 / 4557
页数:5
相关论文
共 17 条
[1]   Properties of BaTiO3 thin films deposited by radiofrequency beam discharge assisted pulsed laser deposition [J].
Canulescu, S ;
Dinescu, G ;
Epurescu, G ;
Matei, DG ;
Grigoriu, C ;
Craciun, F ;
Verardi, P ;
Dinescu, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3) :160-166
[2]   Lead-free high-strain single-crystal piezoelectrics in the alkaline-bismuth-titanate perovskite family [J].
Chiang, YM ;
Farrey, GW ;
Soukhojak, AN .
APPLIED PHYSICS LETTERS, 1998, 73 (25) :3683-3685
[3]  
Chrisey D. B., 1994, PULSED LASER DEPOSIT
[4]   Processing and characterization of ferroelectric thin films obtained by pulsed laser deposition [J].
Craciun, F ;
Dinescu, M ;
Verardi, P ;
Scarisoreanu, N ;
Moldovan, A ;
Purice, A ;
Galassi, C .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (12) :2299-2303
[5]   Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF-PLD [J].
Craciun, F ;
Dinescu, M ;
Verardi, P ;
Scarisoreanu, N ;
Moldovan, A ;
Purice, A ;
Galassi, C .
APPLIED SURFACE SCIENCE, 2005, 248 (1-4) :329-333
[6]   Dielectric spectroscopy measurements of relaxor ferroelectric PLZT 9/65/35 thin films obtained by RF assisted PLD [J].
Craciun, F ;
Dinescu, M ;
Verardi, P ;
Scarisoreanu, N ;
Galassi, C ;
Piazza, D .
FERROELECTRICS, 2004, 302 :559-564
[7]  
CRACIUN F, 2002, HDB THIN FILM MAT, V3, P231
[8]  
DINESCU G, 2004, SPIE, V5448, P136
[9]   THEORY OF INTERDIGITAL COUPLERS ON NONPIEZOELECTRIC SUBSTRATES [J].
KINO, GS ;
WAGERS, RS .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1480-1488
[10]  
Lines M. E., 2001, PRINCIPLES APPL FERR