Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSe

被引：34

作者：

Sorokin, S ^{[1
]}

Shubina, T ^{[1
]}

Toropov, A ^{[1
]}

Sedova, I ^{[1
]}

Sitnikova, A ^{[1
]}

Zolotareva, R ^{[1
]}

Ivanov, S ^{[1
]}

Kop'ev, P ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

基金：

俄罗斯基础研究基金会;

关键词：

molecular beam epitaxy; migration enhanced epitaxy; CdSe; fractional monolayer; incorporation coefficients;

D O I：

10.1016/S0022-0248(98)01376-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Peculiarities of migration-enhanced epitaxy of CdSe fractional monolayers in a ZnSe matrix are studied using photoluminescence (PL) and transmission electron microscopy (TEM) techniques. Dependencies of Cd incorporation coefficient on Se/Cd flux ratio as well as on the temperature are discussed. The critical Cd coverage of growth surface per cycle is established by PL to be of 0.5 ML at 280 degrees C and depends on substrate temperature. The excess of Cd deposited is suggested to accumulate in CdSe-based nanoscale islands (similar to 30 nm in diameter) formed at sites of the growth surface imperfections like point and extended defects, which is confirmed by plan-view TEM measurements. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：461 / 464

页数：4

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