Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes - art. no. 071105

被引：59

作者：

Fuhrmann, D

Netzel, C

Rossow, U

Hangleiter, A

Ade, G

Hinze, P

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.2173619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have optimized the internal quantum efficiency (IQE) of GaInN/GaN quantum-well (QW) structures. For an emission wavelength of 460 nm, a high IQE of 73% was achieved. For a longer emission wavelength, calculations predict higher oscillator strength for thinner QWs but higher In content. We observe an improvement in IQE of almost 50% when reducing the QW width from 2.7 nm to 1.8 nm, and increasing the In content for the whole blue to green spectral region with IQE=40% at 525 nm. The typical saturation of the output power with increasing current that occurs, particularly for green-light-emitting diodes, is extremely weak in our structures.

引用

收藏

页数：3

相关论文

共 11 条

[1] High brightness green light emitting diodes with charge asymmetric resonance tunneling structure [J].

Chen, CH ;

Su, YK ;

Chang, SJ ;

Chi, GC ;

Sheu, JK ;

Chen, JF ;

Liu, CH ;

Liaw, YH .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (03) :130-132

[2]

FUHRMANN D, 2005, IN PRESS PHYS STATUS

[3] Towards understanding the emission efficiency of nitride quantum wells [J].

Hangleiter, A ;

Fuhrmann, D ;

Grewe, M ;

Hitzel, F ;

Klewer, G ;

Lahmann, S ;

Netzel, C ;

Riedel, N ;

Rossow, U .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12) :2808-2813

[4] Composition dependence of polarization fields in GaInN/GaN quantum wells [J].

Hangleiter, A ;

Hitzel, F ;

Lahmann, S ;

Rossow, U .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1169-1171

[5] Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes [J].

Hori, A ;

Yasunaga, D ;

Satake, A ;

Fujiwara, K .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3152-3157

[6]

Lahmann S, 2003, PHYS STATUS SOLIDI C, V0, P2202, DOI 10.1002/pssc.200303497

[7] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes [J].

Mukai, T ;

Yamada, M ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7A) :3976-3981

[8] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].

NAKAMURA, S ;

SENOH, N ;

IWASA, N ;

NAGAHAMA, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799

[9] HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S .

APPLIED PHYSICS LETTERS, 1995, 67 (13) :1868-1870

[10] Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy [J].

Qi, YD ;

Liang, H ;

Wang, D ;

Lu, D ;

Tang, W ;

Lau, KM .

APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3