40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

被引：393

作者：

Geisz, J. F. ^{[1
]}

Friedman, D. J. ^{[1
]}

Ward, J. S. ^{[1
]}

Duda, A. ^{[1
]}

Olavarria, W. J. ^{[1
]}

Moriarty, T. E. ^{[1
]}

Kiehl, J. T. ^{[1
]}

Romero, M. J. ^{[1
]}

Norman, A. G. ^{[1
]}

Jones, K. M. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

基金：

美国能源部;

关键词：

D O I：

10.1063/1.2988497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51In.49P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In.04Ga.96As middle junction, and a metamorphic 0.89 eV In.37Ga.63As bottom junction. The two metamorphic junctions contained approximately 1 x 10(5) cm(-2) and 2-3 x 10(6) cm(-2) threading dislocations, respectively. (C) 2008 American Institute of Physics.

引用

页数：3

共 13 条

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