Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode

被引：25

作者：

Ghosh, S ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.1436526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the properties of a spin-polarized In0.4Ga0.6As/GaAs quantum-dot surface-light-emitting diode with a Ga0.974Mn0.026As spin injector layer. Spin-polarized holes from this ferromagnetic layer recombine with electrons in the quantum dots to produce circularly polarized light output. The peak optical polarization efficiency at 5.1 K is 18% and the spin injection efficiency is estimated to be similar to36%. The temperature dependence of spin injection is almost identical to the temperature dependence of magnetization in the (Ga, Mn)As layer. (C) 2002 American Institute of Physics.

引用

页码：658 / 660

页数：3

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