Anisotropic thermal conductivity of a Si Ge superlattice

被引:10
作者
Borca-Tasciuc, T [1 ]
Song, D [1 ]
Liu, JL [1 ]
Chen, G [1 ]
Wang, KL [1 ]
Sun, X [1 ]
Dresselhaus, MS [1 ]
Radetic, T [1 ]
Gronsky, R [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA
来源
THERMOELECTRIC MATERIALS 1998 - THE NEXT GENERATION MATERIALS FOR SMALL-SCALE REFRIGERATION AND POWER GENERATION APPLICATIONS | 1999年 / 545卷
关键词
D O I
10.1557/PROC-545-473
中图分类号
O414.1 [热力学];
学科分类号
摘要
Experimental evidence for a significant thermal conductivity reduction have been reported in recent years for GaAs/AlAs, Si/Ge, and Bi2Te3/Sb2Te3 superlattices. In this work, we present preliminary experimental results on the reduction of the in-plane and cross-plane thermal conductivity for a symmetric Si/Ge superlattice. A differential 2-wire 3 omega method is developed to perform the anisotropic thermal conductivity measurements. In this technique, a patterned heater with a width much larger than the film thickness yields the cross-plane thermal conductivity of the film. The in-plane thin film thermal conductivity is inferred from the temperature rise of a narrow width heater that can create more heat spreading in the in-plane direction of the thin film. A differential method to measure the temperature drop across the film is employed in order to increase the accuracy of the measurement.
引用
收藏
页码:473 / 478
页数:6
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