Free volume variations during exposure and PEB of DUV positive resists: Effect on dissolution properties

被引：10

作者：

Pain, L

LeCornec, C

Rosilio, C

Paniez, PJ

机构：

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII | 1996年 / 2724卷

关键词：

DUV lithography; positive resist; chemically amplified systems; free volume; development step; dissolution rate; bake;

D O I：

10.1117/12.241878

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The influence of extra free volume content, generated during spin-coating, on the lithographic performance of DUV chemically amplified positive resists has been reported in several papers. During exposure and PEB, the deprotection reaction, together with the evolution of the protecting group, constitute a new source of free volume. As investigated in this study, in addition to the chemical modifications resulting from the deprotection reaction, the free volume content, and its variations during PEB, may affect the dissolution properties of the exposed areas.

引用

页码：100 / 109

页数：10