Preparation of GaN single crystals using a Na flux

被引：268

作者：

Yamane, H ^{[1
]}

Shimada, M ^{[1
]}

Clarke, SJ ^{[1
]}

DiSalvo, FJ ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT CHEM,ITHACA,NY 14853

来源：

CHEMISTRY OF MATERIALS | 1997年 / 9卷 / 02期

关键词：

D O I：

10.1021/cm960494s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaN single. crystals were prepared in a sealed stainless steel tube at 600-800 degrees C from Ga using a Na flux and N-2 from the thermal decomposition of sodium azide, NaN3. The maximum size of the crystals obtained was 2 mm. Oxygen and other impurity elements were not detected in the crystals by AES and EDX. When scaled up, this method may provide large GaN crystals for use as substrates for nitride based lasers.

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页码：413 / &

页数：5

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