Time-domain ab initio simulation of electron and hole relaxation dynamics in a single-wall semiconducting carbon nanotube

被引:94
作者
Habenicht, Bradley F. [1 ]
Craig, Colleen F. [1 ]
Prezhdo, Oleg V. [1 ]
机构
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
关键词
D O I
10.1103/PhysRevLett.96.187401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electron and hole relaxation in the (7,0) zigzag carbon nanotube is simulated in time domain using a surface-hopping Kohn-Sham density functional theory. Following a photoexcitation between the second van Hove singularities, the electrons and holes decay to the Fermi level on characteristic subpicosecond time scales. Surprisingly, despite a lower density of states, the electrons relax faster than the holes. The relaxation is primarily mediated by the high-frequency longitudinal optical (LO) phonons. Hole dynamics are more complex than the electron dynamics: in addition to the LO phonons, holes couple to lower frequency breathing modes and decay over multiple time scales.
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页数:4
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