Advanced materials processing by adsorption control

被引：57

作者：

Haukka, S ^{[1
]}

Suntola, T ^{[1
]}

机构：

[1] MICROCHEM LTD,FIN-02151 ESPOO,FINLAND

来源：

INTERFACE SCIENCE | 1997年 / 5卷 / 2-3期

关键词：

atomic layer epitaxy (ALE); catalyst preparation; high surface area materials; atomic layer level; gas-solid reactions; saturation; chemisorption;

D O I：

10.1023/A:1008601024870

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Precise control and knowledge of surface structures are essential in order to meet the requirements of today's and future materials. One possible growth technique capable of meeting the requirements is atomic layer epitaxy (ALE). ALE is based on sequentially applied saturated gas-solid reactions, which provide the means for adsorption controlled material deposition at atomic layer level. In this paper the potentiality of the use of porous materials in a detailed study of adsorption controlled growth is discussed. At the same time the study promotes the application of adsorption controlled materials processing for advanced catalysts manufacturing.

引用

页码：119 / 128

页数：10

共 23 条

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