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Compact high gain erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion exchange

被引：34
作者：
Della Valle, G.
Taccheo, S.
Sorbello, G.
Cianci, E.
Foglietti, V.
Laporta, R.
机构：
[1] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy
[2] CNR, Ist Foton & Nanotecnol, I-20133 Milan, Italy
[3] Catania Univ, Dipartimento Ingn Informat Telecommun, I-95125 Catania, Italy
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 11期
关键词：
D O I：
10.1049/el:20060555
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A report is presented on an erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion-exchange in a commercial phosphate glass substrate. The 31 mm-long active waveguide provides a maximum internal gain of 5.3 dB/cm at 1534 nm. The amplifier was fully characterised in terms of gain spectrum, noise figure, pump efficiency and gain saturation.
引用
收藏
页码：632 / 633
页数：2
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