Spin-valve films using exchange-coupled CrMnPt/Co structure

Spin-valve films using CrMnPt/Co structure were investigated. The exchange coupling field (Hex) applied on 3 nm thick Co pinned layers was increased by annealing from 190 Oe to 320 similar to 380 Oe. The annealing treatment necessary for the enhancement of the Hex was typically 230 degrees C, 1 hr. The annealing distorted the crystal lattice of the CrMnPt films, which is likely to enhance the Hex. The blocking temperature was 320 degrees C, The resistivity of the CrMnPt films was as high as 300 mu Omega cm resulting in low current shunting to antiferromagnetic layers in spin-valve films.