Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

被引：18

作者：

Rogers, DJ ^{[1
]}

Teherani, FH ^{[1
]}

Monteiro, T ^{[1
]}

Soares, M ^{[1
]}

Neves, A ^{[1
]}

Carmo, M ^{[1
]}

Pereira, S ^{[1
]}

Correia, MR ^{[1
]}

Lusson, A ^{[1
]}

Alves, E ^{[1
]}

Barradas, NP ^{[1
]}

Morrod, JK ^{[1
]}

Prior, KA ^{[1
]}

Kung, P ^{[1
]}

Yasan, A ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Nanovat SARL, 103 Bis Rue Versailles, F-91400 Orsay, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期

关键词：

D O I：

10.1002/pssc.200564756

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (similar to 260 cm(2)/Vs) and a carrier concentration of similar to 1.8 x 10(19) cm(-3). C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn2As2O7. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450 degrees C (without post-annealing). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1038 / +

页数：2

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