Ion implantation of optical ferroelectrics

被引：8

作者：

Buchal, C

Fluck, D

Günter, P

机构：

[1] Forschungszentrum Julich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany

[2] ETH Honggerberg, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

JOURNAL OF ELECTROCERAMICS | 1999年 / 3卷 / 02期

关键词：

ion implantation; optical ferroelectrics; thin films;

D O I：

10.1023/A:1009951311965

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We discuss ion implantation as a powerful non-equilibrium processing technology and show its potential for optical waveguide formation by damage engineering and by direct doping. Also the strong improvement of photorefractive properties by implantation-induced vacancies is demonstrated. Finally recent results of the growth of thin ferroelectric films by laser epitaxy and metal-organic vapor-phase epitaxy are presented. The combination of thin film growth techniques of optical ferroelectrics together with ion beam modification will prove important in this strongly advancing field.

引用

页码：179 / 193

页数：15

共 56 条

[1] GUIDED WAVE MODULATORS IN TI ION-IMPLANTED LINBO3 WAVE-GUIDES [J].