Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

被引：17

作者：

Kundaliya, DC ^{[1
]}

Ogale, SB

Dhar, S

McDonald, KF

Knoesel, E

Osedach, T

Lofland, SE

Shinde, SR

Venkatesan, T

机构：

[1] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA

[2] Rowan Univ, Dept Phys & Astron, Glassboro, NJ 08028 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 299卷 / 02期

关键词：

thin films; GaFeO3; MOKE; pulsed laser deposition; magnetization;

D O I：

10.1016/j.jmmm.2005.04.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 Oil Si (100) Substrate. The ferromagnetic transition temperature (T-C similar to 215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of similar to 15 degrees in the ferromagnetic state. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：307 / 311

页数：5

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