Simulation of pressure-induced polyamorphism in a chalcogenide glass GeSe2 -: art. no. 104208

被引:82
作者
Durandurdu, M [1 ]
Drabold, DA [1 ]
机构
[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
关键词
D O I
10.1103/PhysRevB.65.104208
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The pressure-induced insulator-metal transition in amorphous GeSe2 (a-GeSe2) is studied using an ab initio constant pressure molecular-dynamic simulation. a-GeSe2 transforms gradually to an amorphous metallic state under the application of pressure. The transition is reversible, and is associated with a gradual change from fourfold to sixfold Ge coordination, and from twofold to fourfold Se coordination. Pressure reduces the occurrence of chemical disorder up to 13 GPa. It is found that the optical gap decreases gradually, and the highly localized electronic and vibrational states of the glass at zero-pressure become extended with an increase of the pressure.
引用
收藏
页码:1042081 / 1042088
页数:8
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