SnO2 thin film gas sensor fabricated by ion beam deposition

被引：89

作者：

Min, BK ^{[1
]}

Choi, SD ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Met & Mat Engn, Kyongsan 712749, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2004年 / 98卷 / 2-3期

关键词：

ion beam sputtering; long-term stability; methane gas; thin film; crystallite growth inhibitor; surface roughness;

D O I：

10.1016/j.snb.2003.10.023

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Thin films of undoped and Ca-doped SnO2 were deposited by ion beam sputtering (IBS). The films annealed at 650degreesC possess good adhesion and only SnO2 single-phase. The CH4 Sensitivities of a thin film sensor are mainly affected by surface roughness together with agglomeration of primary particles of SnO2. The highly dense, single-phase SnO2 film sensors exhibit greatly excellent long-term stability. Differently from the sensing behaviors for a sintered or a thick film sensor, Ca addition to SnO2 as a crystallite growth inhibitor causes lower sensitivity for the thin film sensor. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：239 / 246

页数：8

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