Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

被引：60

作者：

Aigouy, L

Holden, T

Pollak, FH

Ledentsov, NN

Ustinov, WM

Kopev, PS

Bimberg, D

机构：

[1] CUNY BROOKLYN COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,BROOKLYN,NY 11210

[2] AF IOFFE PHYS TECH INST,ST PETERSBURG 195251,RUSSIA

[3] TECH UNIV BERLIN,D-10623 BERLIN,GERMANY

[4] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期

关键词：

D O I：

10.1063/1.119160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contactless electroreflectance, at both 300 and 20 K, has been used to investigate a vertically coupled quantum dot (QD)-based InAs/GaAs laser structure. Signals have been observed from all the relevant portions of the sample including the QDs and wetting layer. The energies of the QD transitions provide evidence for both lateral as well as vertical coupling. (C) 1997 American Institute of Physics.

引用

页码：3329 / 3331

页数：3

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