Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

被引：686

作者：

Fang, Hui ^{[1
,2
,3
]}

Tosun, Mahmut ^{[1
,2
,3
]}

Seol, Gyungseon ^{[4
]}

Chang, Ting Chia ^{[1
,2
,3
]}

Takei, Kuniharu ^{[1
,2
,3
]}

Guo, Jing ^{[4
]}

Javey, Ali ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[4] Univ Florida, Gainesville, FL 32611 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 05期

基金：

美国国家科学基金会;

关键词：

Degenerate doping; few-layer; TMDCs; MoS2; WSe2; potassium; surface charge transfer; INTEGRATED-CIRCUITS; MOS2; TRANSISTORS; ALGORITHM;

D O I：

10.1021/nl400044m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of similar to 1.0 x 10(13) cm(-2) and 2.5 X 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low contact resistances. Uniquely, WSe2 n-FETs are reported for the first time, exhibiting an electron mobility of similar to 110 cm(2)/V.s, which is comparable to the hole mobility of previously reported p-FETs using the same material. Ab initio simulations were performed to understand K doping of MoS2 and WSe2 in comparison with graphene. The results here demonstrate the need of degenerate doping of few-layer chalcogenides to improve the contact resistances and further realize high performance and complementary channel electronics.

引用

页码：1991 / 1995

页数：5

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