Interface resistances of magnetic multilayers

被引：106

作者：

Schep, KM

vanHoof, JBAN

Kelly, PJ

Bauer, GEW

Inglesfield, JE

机构：

[1] DELFT UNIV TECHNOL,DELFT INST MICROELECT & SUBMICRONTECHNOL,NL-2628 CJ DELFT,NETHERLANDS

[2] UNIV NIJMEGEN,DEPT THEORET PHYS,NL-6525 ED NIJMEGEN,NETHERLANDS

[3] PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDS

[4] UNIV WALES COLL CARDIFF,DEPT PHYS & ASTRON,CARDIFF CF2 3YB,S GLAM,WALES

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.56.10805

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Perpendicular transport in disordered magnetic multilayers is studied by combining first-principles electronic-structure calculations with the Boltzmann equation. Resistor-model-type expressions for the multilayer resistance are derived and interface resistances are calculated without using any adjustable parameters. Experimentally observed interface resistances can be explained largely in terms of specular interface scattering and diffuse bulk scattering. [S0163-1829(97)06337-6].

引用

收藏

页码：10805 / 10808

页数：4

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