Cubic boron nitride thin film synthesis on silica substrates by low-pressure inductively-coupled r.f. plasma chemical vapor deposition

被引：8

作者：

Chattopadhyay, KK ^{[1
]}

Matsumoto, S ^{[1
]}

Zhang, YF ^{[1
]}

Sakaguchi, I ^{[1
]}

Nishitani-Gamo, M ^{[1
]}

Ando, T ^{[1
]}

机构：

[1] Natl Inst Res Inorgan Mat, JST, CREST, Tsukuba, Ibaraki 3050044, Japan

来源：

THIN SOLID FILMS | 1999年 / 354卷 / 1-2期

关键词：

boron nitride; chemical vapor deposition; silicon oxide; optical properties;

D O I：

10.1016/S0040-6090(99)00540-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic boron nitride (cBN) thin films were successfully deposited on fused silica substrates by low pressure inductively coupled radio frequency plasma chemical vapor deposition from B2H6 + N-2 + Ar gas mixtures. Ion bombardment was a necessary condition for the cubic phase growth. Glancing angle X-ray diffraction showed reflections of cBN up to 311 and confirmed the growth of the cubic phase. Lattice distortion in the films estimated from the X-ray diffraction data was about a half of that of films on silicon substrates. Adhesion to the silica substrates was better than to the silicon substrates. Auger and electron energy loss spectroscopy also confirmed the formation of cBN phase. Ultraviolet and visible spectra showed the films are transparent with an optical bandgap of similar to 5.4 eV. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：24 / 28

页数：5

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