The effect of nitrogen on the growth, morphology, and crystalline quality of MPACVD diamond films

被引：32

作者：

Asmussen, J ^{[1
]}

Mossbrucker, J ^{[1
]}

Khatami, S ^{[1
]}

Huang, WS ^{[1
]}

Wright, B ^{[1
]}

Ayres, V ^{[1
]}

机构：

[1] Michigan State Univ, Dept Elect Engn, E Lansing, MI 48824 USA

来源：

关键词：

MPACVD diamond films; nitrogen; morphology; crystalline quality;

D O I：

10.1016/S0925-9635(98)00371-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of varying nitrogen concentrations (5-1000 ppm) on the conventional CH4/H-2 diamond film deposition process using a microwave plasma disk reactor is investigated. This reactor has important differences, such as reactor volume, power density, gas flow, from the common tubular microwave reactors. The experimental behavior indicates, that similar to the tubular reactors, the addition of small amounts of a nitrogen stabilizes the growth of high quality, {100} faceted films. However, the actual threshold nitrogen concentrations and the variation of these threshold concentrations versus other independent experimental variables differs considerably from tubular reactor performance. This suggests that reactor design has an important influence on the deposition process in the presence of impurities. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：220 / 225

页数：6

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