Dependence of intersubband absorption on the number of quantum wells: Radiative coupling effects

被引:6
作者
Xin, C [1 ]
机构
[1] Univ Manchester, Inst Sci & Technol, Dept Phys, Manchester M60 1QD, Lancs, England
关键词
intersubband absorption; local field; quantum wells; radiative coupling;
D O I
10.1109/3.766835
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
On the basis of a microscopic theory, in which the electromagnetic and electronic nonlocalities have been incorporated, dependence of the intersubband absorption on the number of quantum wells (QW's) is studied. Detailed numerical simulations show that changes in the number of wells, the angle of incidence, and the barrier thickness between adjacent wells can significantly modify the radiative coupling among QW's. Consequently, the intersubband absorption spectrum can also be changed.
引用
收藏
页码:922 / 927
页数:6
相关论文
共 27 条
[1]  
[Anonymous], PROG OPT
[2]   PERTURBATIVE APPROACH TO THE CALCULATION OF THE ELECTRIC-FIELD NEAR A METAL-SURFACE [J].
BAGCHI, A ;
BARRERA, RG ;
RAJAGOPAL, AK .
PHYSICAL REVIEW B, 1979, 20 (12) :4824-4838
[3]   COUPLED-QUANTUM-WELL SEMICONDUCTORS WITH GIANT ELECTRIC-FIELD TUNABLE NONLINEAR-OPTICAL PROPERTIES IN THE INFRARED [J].
CAPASSO, F ;
SIRTORI, C ;
CHO, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (05) :1313-1326
[4]   Photon drag in single and multiple two-level quantum wells [J].
Chen, X ;
Keller, O .
PHYSICAL REVIEW B, 1997, 55 (23) :15706-15719
[5]   Optical second-harmonic generation in two-level quantum wells embedded in a planar microcavity [J].
Chen, X .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (01) :27-34
[6]   Intersubband optical absorption in two-level quantum wells embedded in a planar microcavity [J].
Chen, X .
OPTICAL AND QUANTUM ELECTRONICS, 1997, 29 (11-12) :1023-1036
[7]  
Chen X, 1998, PHYS STATUS SOLIDI B, V207, P259, DOI 10.1002/(SICI)1521-3951(199805)207:1<259::AID-PSSB259>3.0.CO
[8]  
2-A
[9]   Local-field effects on photon drag in multiple quantum wells [J].
Chen, X .
PHYSICA SCRIPTA, 1998, 58 (04) :377-382
[10]  
Chen X, 1997, PHYS STATUS SOLIDI B, V203, P287, DOI 10.1002/1521-3951(199709)203:1<287::AID-PSSB287>3.0.CO