Determination of phonon dispersions from X-ray transmission scattering: The example of silicon

被引:63
作者
Holt, M
Wu, Z
Hong, HW
Zschack, P
Jemian, P
Tischler, J
Chen, H
Chiang, TC
机构
[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[4] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
关键词
D O I
10.1103/PhysRevLett.83.3317
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A beam of monochromatic synchrotron x-ray incident on a silicon wafer creates a rich intensity pattern behind the wafer that reflects the cross section of scattering by thermally populated phonons. A least-squares fit of the patterns based on a lattice dynamics calculation yields the phonon dispersion relations over the entire reciprocal space. This simple and efficient method is suitable for phonon studies in essentially all materials, and complements the traditional neutron scattering technique.
引用
收藏
页码:3317 / 3319
页数:3
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