A comprehensive wafer oriented test evaluation (WOTE) scheme for the IDDQ testing of deep sub-micron technologies

被引：17

作者：

Singh, AD

机构：

来源：

IEEE INTERNATIONAL WORKSHOP ON IDDQ TESTING, DIGEST OF PAPERS | 1997年

关键词：

D O I：

10.1109/IDDQ.1997.633011

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

As device dimensions approach 0.1 mu m, analog: effects will play an even larger role in digital circuits. IDDQ measurements call be significantly affected by the observed wafer to wafer (and even die to die) variations in electrical parameters. II this presentation we make a case for a Wafer Oriented Test Evaluation (WOTE) strategy where acceptable IDDQ thresholds are set based on the IDDQ measurements observed for the neighbouring die. Such an approach will minimize yeild loss due to IDDQ testing while identifying defective die with abnormal IDDQ in comparison with thier neighbours.

引用

页码：40 / 43

页数：4