Widegap a-Si:H films prepared at low substrate temperature

被引：11

作者：

Saha, SC ^{[1
]}

Ghosh, S ^{[1
]}

Ray, S ^{[1
]}

机构：

[1] INDIAN ASSOC CULTIVAT SCI,ENERGY RES UNIT,CALCUTTA 700032,W BENGAL,INDIA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 45卷 / 02期

关键词：

amorphous silicon; PECVD; optoelectronic properties; Schottky barrier solar cell;

D O I：

10.1016/S0927-0248(96)00030-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Wide bandgap hydrogenated amorphous silicon (a-Si:H) films have been prepared by the PECVD method at a low substrate temperature (80 degrees C), controlling the incorporation of hydrogen (bonded with silicon) into the film. Optimizing the deposition parameters viz. hydrogen dilution, rf power, a-Si:H film with E(g) similar to 1.90 eV and sigma(ph) greater than or equal to 10(-4) Scm(-1) has been developed. This film exhibited better optoelectronic properties compared to a-SiC:H of similar optical gap. The quantum efficiency measurement on the Schottky barrier solar cell structure showed a definite enhancement of blue response. Surface reaction as well as structural relaxation under suitable deposition condition have been claimed to be responsible for the development of such material.

引用

页码：115 / 126

页数：12

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