Rapid thermal annealing of ion implanted 6H-SIC by microwave processing

被引：18

作者：

Gardner, JA

Rao, MV

Tian, YL

Holland, OW

Roth, EG

Chi, PH

Ahmad, I

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

[2] NIST,GAITHERSBURG,MD 20899

[3] FM TECHNOL,FAIRFAX,VA 22032

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 03期

基金：

美国国家科学基金会;

关键词：

implantation; microwave annealing; rapid thermal processing; silicon carbide;

D O I：

10.1007/s11664-997-0141-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Rapid thermal processing utilizing microwave energy has been used to anneal N, P, and Al ion-implanted 6H-SiC. The microwaves raise the temperature of the sample at a rate of 200 degrees C/min vs 10 degrees C/min for conventional ceramic furnace annealing. Samples were annealed in the temperature range of 1400-1700 degrees C for 2-10 min. The implanted/annealed samples were characterized using van der Pauw Hall, Rutherford backscattering, and secondary ion mass spectrometry. For a given annealing temperature, the characteristics of the microwave annealed material are similar to those of conventional furnace anneals despite the difference in cycle time.

引用

页码：144 / 150

页数：7

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