On the correlation of postannealing induced phase transition in pentacene with carrier transport

被引:33
作者
Ji, Taeksoo [1 ]
Jung, Soyoun [1 ]
Varadan, Vijay K. [1 ]
机构
[1] Univ Arkansas, Dept Elect Engn, OEDL, Fayetteville, AR 72701 USA
关键词
organic thin film transistor; pentacene; postannealing; thin film phase; bulk phase;
D O I
10.1016/j.orgel.2008.03.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Postannealing effects on pentacene thin film transistors (TFTs) are discussed correlating the pentacene film morphology, the crystalline polymorph, and the electronic transport. The bulk phase thermally induced in pentacene during postannealing treatment is found to be another main cause detrimental to the carrier transport of TFTs. In addition, it turns out that encapsulation of the TFTs using polyvinyl alcohol helps to improve the thermal stability by retarding the onset of the bulk phase in pentacene. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:895 / 898
页数:4
相关论文
共 19 条
[1]   Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO2 substrates [J].
Bouchoms, IPM ;
Schoonveld, WA ;
Vrijmoeth, J ;
Klapwijk, TM .
SYNTHETIC METALS, 1999, 104 (03) :175-178
[2]  
CHESTERFIELD RJ, 2006, PHYS CHEM B, V108, P19281
[3]   Molecular beam deposited thin films of pentacene for organic field effect transistor applications [J].
Dimitrakopoulos, CD ;
Brown, AR ;
Pomp, A .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2501-2508
[4]   Thickness-driven orthorhombic to triclinic phase transformation in pentacene thin films [J].
Drummy, LF ;
Martin, DC .
ADVANCED MATERIALS, 2005, 17 (07) :903-+
[5]   Solvent-induced phase transition in thermally evaporated pentacene films [J].
Gundlach, DJ ;
Jackson, TN ;
Schlom, DG ;
Nelson, SF .
APPLIED PHYSICS LETTERS, 1999, 74 (22) :3302-3304
[6]   Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors [J].
Guo, D ;
Ikeda, S ;
Saiki, K ;
Miyazoe, H ;
Terashima, K .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
[7]   Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors [J].
Horowitz, G ;
Hajlaoui, ME ;
Hajlaoui, R .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4456-4463
[8]   Temperature sensor using thermal transport properties in the subthreshold regime of an organic thin film transistor [J].
Jung, Soyoun ;
Ji, Taeksoo ;
Varadan, Vijay K. .
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[9]   Influence of postannealing on polycrystalline pentacene thin film transistor [J].
Kang, SJ ;
Noh, M ;
Park, DS ;
Kim, HJ ;
Whang, CN ;
Chang, CH .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) :2293-2296
[10]   Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport [J].
Knipp, D ;
Street, RA ;
Völkel, A ;
Ho, J .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :347-355