organic thin film transistor;
pentacene;
postannealing;
thin film phase;
bulk phase;
D O I:
10.1016/j.orgel.2008.03.005
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Postannealing effects on pentacene thin film transistors (TFTs) are discussed correlating the pentacene film morphology, the crystalline polymorph, and the electronic transport. The bulk phase thermally induced in pentacene during postannealing treatment is found to be another main cause detrimental to the carrier transport of TFTs. In addition, it turns out that encapsulation of the TFTs using polyvinyl alcohol helps to improve the thermal stability by retarding the onset of the bulk phase in pentacene. (C) 2008 Elsevier B.V. All rights reserved.
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Gundlach, DJ
;
Jackson, TN
论文数: 0引用数: 0
h-index: 0
机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Jackson, TN
;
Schlom, DG
论文数: 0引用数: 0
h-index: 0
机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Schlom, DG
;
Nelson, SF
论文数: 0引用数: 0
h-index: 0
机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Gundlach, DJ
;
Jackson, TN
论文数: 0引用数: 0
h-index: 0
机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Jackson, TN
;
Schlom, DG
论文数: 0引用数: 0
h-index: 0
机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Schlom, DG
;
Nelson, SF
论文数: 0引用数: 0
h-index: 0
机构:Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA