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20-Gb/s integrated DBR laser EA modulator by selective area growth for 1.55-mu m WDM applications

被引：30
作者：
Delprat, D
Ramdane, A
Silvestre, L
Ougazzaden, A
Delorme, F
Slempkes, S
机构：
[1] France Telecom., CNET/PAB
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期
关键词：
distributed Bragg reflector lasers; optical communication; optical transmitters; quantum-well devices; semiconductors;
D O I：
10.1109/68.593338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, selective area growth (SAG) has been used for the monolithic integration of a distributed Bragg reflector (DBR) laser with an electroabsorption (EA) modulator, designed for WDM communication systems at 1.55 mu m. A 16-GHz bandwidth combined with a 6-nm tuning range make this component compatible with multiwavelength 20-Gb/s transmission experiments.
引用
收藏
页码：898 / 900
页数：3
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