Influence of the deposition parameters on boron nitride growth mechanisms in a hollow cathode are evaporation device

Boron nitride (BN) layers were deposited in a hollow cathode are evaporation device (HCAED). The cubic-BN (c-BN) content was determined by Fourier transform infrared spectroscopy. The film thickness was deduced by reflectance measurements in the visible range. The c-BN content and growth rates were measured in dependence on substrate temperature, substrate bias voltage, nitrogen and argon partial pressures and substrate materials (Si, Al, high-speed steel). Calculated flux rates of neutrals and ions to the substrate are used to derive sticking coefficients of boron. On silicon we could identify parameter ranges were nearly pure c-BN layers were deposited. Film thickness of 1.5 mu m could be reached on silicon without peeling off. (C) 1997 Elsevier Science S.A.