Photonic band gap materials: The ''semiconductors'' of the future

被引:23
作者
Soukoulis, CM [1 ]
机构
[1] IOWA STATE UNIV SCI & TECHNOL, DEPT PHYS & ASTRON, AMES, IA 50011 USA
关键词
D O I
10.1088/0031-8949/1996/T66/025
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An overview of the theoretical and experimental efforts in obtaining a photonic band gap, a frequency band in three-dimensional dielectric structures in which electromagnetic waves are forbidden is presented.
引用
收藏
页码:146 / 150
页数:5
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