Influence of nitrogen doping on the defect formation and surface properties of TiO2 rutile and anatase -: art. no. 026103

被引:613
作者
Batzill, M [1 ]
Morales, EH [1 ]
Diebold, U [1 ]
机构
[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA
关键词
D O I
10.1103/PhysRevLett.96.026103
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Nitrogen doping-induced changes in the electronic properties, defect formation, and surface structure of TiO2 rutile(110) and anatase(101) single crystals were investigated. No band gap narrowing is observed, but N doping induces localized N 2p states within the band gap just above the valence band. N is present in a N(III) valence state, which facilitates the formation of oxygen vacancies and Ti 3d band gap states at elevated temperatures. The increased O vacancy formation triggers the 1x2 reconstruction of the rutile (110) surface. This thermal instability may degrade the catalyst during applications.
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页数:4
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