Theoretical study of hydrogen in cubic GaN

被引:12
作者
Estreicher, SK
Maric, DM
机构
来源
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷
关键词
D O I
10.1557/PROC-423-613
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Preliminary results of theoretical studies of hydrogen and hydrogen-related defects in cubic GaN are reported. Our calculations contrast with those of other authors in that the host crystal is represented by molecular clusters rather than periodic supercells, and that they are obtained using an all-electron methodology rather than the single effective-particle approach of density-functional theory. Our results confirm some predictions of other authors but conflict with others.
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页码:613 / 618
页数:6
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