Exciton-photon interaction effects in quantum wells

被引:19
作者
Zheng, RS
Matsuura, M
机构
[1] INNER MONGOLIA UNIV,DEPT PHYS,HOHHOT,PEOPLES R CHINA
[2] YAMAGUCHI UNIV,FAC ENGN,DEPT ADV MAT SCI & ENGN,UBE,YAMAGUCHI 755,JAPAN
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 04期
关键词
D O I
10.1103/PhysRevB.56.2058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Properties of excitons interacting with interface optical phonons and confined longitudinal optical phonons in semiconducting compound quantum wells are investigated theoretically. By using the nonseparable trial wave function the exciton binding energies and the interaction energies of excitons with every phonon mode in two typical quantum-well structures. GaAs/AlAs and CdSe/ZnSe, are calculated as a function of the well width. Some interesting features of the exciton-phonon interaction system in quantum wells are found and discussed. The theoretical result gives a reasonable explanation of the agreement of some simple exciton theories with experiments.
引用
收藏
页码:2058 / 2061
页数:4
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