Screening effect of metal, semiconductor and insulator surfaces on the photo-fragmentation of physisorbed molecules

被引:6
作者
Baba, Y [1 ]
Sekiguchi, T [1 ]
机构
[1] Japan Atom Energy Res Inst, Dept Synchrotron Radiat Res, Tokai, Ibaraki 3191195, Japan
关键词
Auger electron spectroscopy; inner-shell photoexcitation; photon-stimulated desorption (PSD); screening effect; tetrachloromethane; X-ray absorption near-edge structure (XANES);
D O I
10.1016/S0039-6028(99)00042-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photon-stimulated desorption of fragment ions from physisorbed CCl4 on metallic Cu(100), semiconducting Si(100) and insulating SiO2 surfaces has been investigated using synchrotron soft X-ray around the Cl K-edge. Only atomic Cl+ ions were desorbed from CCl4/Cu(100) and CCl4/Si(100) following the Cl K-edge excitation. In contrast, molecular CCl3+ ions were desorbed as well from CCl4/SiO2. The lack of molecular-ion desorption from Cu(100) and Si(100) is interpreted as the quenching of the excited states due to charge-transfer screening by the substrate. The desorption of molecular species observed only for CCl4/SiO2 is interpreted not as the direct core-to-valence resonant excitation but as Auger-stimulated secondary electrons due to the weak screening effect of the insulator surface. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:843 / 848
页数:6
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