Microstructural development and optical properties of epitaxial Ge1-xCx alloys on Si(100)

被引：29

作者：

Krishnamurthy, M

Yang, BK

Weber, WH

机构：

[1] Dept. of Metall. and Mat. Eng., Michigan Technological University, Houghton

[2] Physics Department, Ford Research Laboratories, Dearborn

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the microstructural development and optical properties of epitaxial Ge1-xCx alloys (0<x<0.1) grown on Si(100) by low-temperature (200 degrees C) molecular-beam epitaxy. Films with C concentrations below 2%-3% grow in 2D layers, while films with C higher than 5% form 3D islands after initial layer growth. X-ray-diffraction indicates that less than 1% C may have been substitutionally incorporated. Spectroscopic ellipsometry measurements of the films' optical constants show small systematic changes with increasing C concentration. These changes occur primarily near 2 eV, the E(1) critical point in Ge. No new features attributable to Ce-C vibrational modes could be identified using Raman spectroscopy. (C) 1995 American Institute of Physics.

引用

页码：2572 / 2574

页数：3

共 18 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].