A Mechanism of Quasi-One-Dimensional Vapor Phase Growth of Si and GaP Whiskers

Using vapor phase growth, we have studied the conditions and mechanisms of Si and GaP whisker growth on (111) and (100) substrates in the presence of Au, Cu, Ni, and Pt as metal solvents. Our experimental data demonstrate that the rate of whisker growth is unaffected by the nature and orientation of the substrate and that the liquid droplet wets the (111) singular face of the growth front. The three-phase line of contact acts as a source of steps on the singular face of the growth front under the droplet. Based on the present results, a physicochemical mechanism of quasi-one-dimensional vapor-droplet-solid whisker growth has been proposed and substantiated.