2.5 kV-100 a flat-packaged IGBT (Micro-Stack IGBT)

被引：14

作者：

Takahashi, Y ^{[1
]}

Koga, T ^{[1
]}

Kirihata, H ^{[1
]}

Seki, Y ^{[1
]}

机构：

[1] YAMANASHI UNIV,GRAD SCH ENGN,KOFU,YAMANASHI 400,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 12期

关键词：

D O I：

10.1109/16.544421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed, This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable hat-packaged MOS controlled device, The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged, The great advantage of this structure is the double side cooling and the emitter wire bondingless, The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current I-c = 100 A, the turn-off capability of 8 x I-c, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.

引用

页码：2276 / 2282

页数：7

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