Preparation and properties of electrochromic iridium oxide thin film by sol-gel process

被引：77

作者：

Nishio, K ^{[1
]}

Watanabe, Y ^{[1
]}

Tsuchiya, T ^{[1
]}

机构：

[1] Sci Univ Tokyo, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan

来源：

THIN SOLID FILMS | 1999年 / 350卷 / 1-2期

关键词：

sol-gel process; electrical properties and measurements; iridium; optical properties; oxides;

D O I：

10.1016/S0040-6090(99)00290-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We established a method for preparation of iridium oxide thin film by the sol-gel dip-coating process where iridium chloride was used as a starting material. The coating solution was prepared by reacting iridium chloride, ethanol and acetic acid. Iridium oxide coating was formed at 2.0 cm/min withdrawing rate. The coating films heat treated at 300 degrees C did not contain impurities. Iridium oxide crystallized at temperatures above 450 degrees C. Both crystalline and amorphous iridium oxide thin films showed electrochromism. The change in transmittance of the crystalline Ir2O3 film is larger than that of the amorphous Ir2O3 under the same experimental conditions. The transmittance of the crystalline thin firm (film thickness 200 nm, measured at 400 nm) decreased 13.0% on application of 3 V for 1 s. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：96 / 100

页数：5

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