Electronic transport in polycrystalline Pbl2 films

被引:61
作者
Street, RA
Ready, SE
Lemmi, F
Shah, KS
Bennett, P
Dmitriyev, Y
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[2] Radiat Monitoring Devices Inc, Watertown, MA 02172 USA
关键词
D O I
10.1063/1.371107
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic transport and optical measurements in polycrystalline Pbl(2) are reported as part of a study to evaluate the material for large area x-ray imaging applications. The films are deposited by vacuum evaporation with thickness 20-100 mu m and have grain sizes of up to 10 mu m. The room temperature hole drift mobility measured by time-of-flight is 2x10(-2)-1.5x10(-1) cm(2)/V s, depending on the specific sample, with an activation energy of 0.25 eV. Hole charge collection measurement gives about 10(-6) cm(2)/V for the mobility-lifetime product. Details of the electron transport were not determined in this study because the mobility is too small. The hole transport is discussed in terms of a trapping model with either a discrete level above the valence band or a disorder-induced band tail. Optical absorption, photoconductivity, and Hall effect measurements are also reported. (C) 1999 American Institute of Physics. [S0021-8979(99)07816-0].
引用
收藏
页码:2660 / 2667
页数:8
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