Surface structure of Gd5(Si,Ge)4 crystals

被引：26

作者：

Szade, J ^{[1
]}

Skorek, G ^{[1
]}

Winiarski, A ^{[1
]}

机构：

[1] Silesian Univ, Inst Phys, PL-40007 Katowice, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 205卷 / 03期

关键词：

Czochralski method; Auger electron spectroscopy; surface analysis;

D O I：

10.1016/S0022-0248(99)00252-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Crystal growth of Gd5Si4, Gd5Si2Ge2 and Gd5Ge4 was performed using the Czochralski method from the levitated melt. Single crystalline plates were obtained for all compounds. The Berg-Barrett topography revealed the existence of stress within the plates. The surface of the plates shows a regular system of lines or channels, which is independent of the growth steps and the stress structure. The auger electron spectroscopy investigation of that structure revealed the increase of gadolinium and oxygen contents in the area of lines, which had the width of about 2 mu m. We suppose this concentration of impurities may take place along dislocations, which could be formed during the structural transition at high temperature. (C) 1999 Elsevier Science B.V, All rights reserved.

引用

页码：289 / 293

页数：5

共 6 条

[1] NEW FERROMAGNETIC 5 - 4 COMPOUNDS IN RARE EARTH SILICON AND GERMANIUM SYSTEMS [J].