Heterostructure solar cells

被引：11

作者：

Andreev, VM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 09期

关键词：

Radiation; Solid Solution; GaAs; Solar Cell; Magnetic Material;

D O I：

10.1134/1.1187808

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 [凝聚态物理];

摘要：

Heterostructure solar cells based on III-V compounds are studied. Record-high efficiencies are obtained for solar cells based on AlGaAs/GaAs heterostructures: 24.6% for 100-fold concentration of sunlight in outer space (AM0) and 27.5% for 100-fold concentration of the light on the ground (AM1.5). A substantial increase in radiation resistance is obtained for solar cells with a built-in Bragg mirror. Cascaded solar cells with efficiencies of up to 32% for 100 suns (AM1.5) are created and studied; in these cells the upper wide-gap materials are infrared transparent elements based on GaAs, while the lower narrow-band elements are made of GaSb or an InGaAs solid solution. (C) 1999 American Institute of Physics. [S1063-7826(99)00309-9].

引用

页码：942 / 945

页数：4

共 18 条

[1]

ALFEROV ZI, 1969, SOV PHYS SEMICOND, V3, P974

[2]

ALFEROV ZI, 1977, SOV PHYS SEMICOND, V11, P1014

[3]

ALFEROV ZI, 1970, SOV PHYS SEMICOND, V4, P1535

[4]

Andreev V. M., 1995, Proceedings of the European Space Power Conference (ESA SP-369), P367

[5]

Andreev V. M., 1997, Photovoltaic Conversion of Concentrated Sunlight

[6]

Andreev V. M., 1989, PHOTOELECTRIC CONVER

[7]

ANDREEV VM, 1994, IEEE PHOT SPEC CONF, P2096, DOI 10.1109/WCPEC.1994.521634

[8]

ANDREEV VM, 1994, IEEE PHOT SPEC CONF, P1894, DOI 10.1109/WCPEC.1994.520737

[9]

ANDREEV VM, 1996, P S COMP SEM ST PET, P449

[10]

ANDREEV VM, 1973, SOV PHYS SEMICOND, V7, P1365

← 1 2 →