Influence of soft breakdown on NMOSFET device characteristics

被引：54

作者：

Pompl, T ^{[1
]}

Wurzer, H ^{[1
]}

Kerber, M ^{[1
]}

Wilkins, RCW ^{[1
]}

Eisele, I ^{[1
]}

机构：

[1] Siemens Semicond Grp, D-81739 Munich, Germany

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761596

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The degradation of important transistor parameters related to soft breakdown and hard breakdown were studied. Long and short channel transistors were homogeneously stressed at elevated temperature until soft breakdown or hard breakdown occurred. The only noticeable signature of soft breakdown is an increase in off current due to enhanced gate induced drain leakage current, This effect arises, if the soft breakdown is located within the gate-to-drain overlap region. Soft breakdown generates a spot or path of negative charges in the oxide and therefore enhances gate induced drain leakage current.

引用

页码：82 / 87

页数：6

共 9 条

[1]

BRIERE O, ESSDERC 96, V759, P96

[2] On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers [J].